集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
80V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
65V |
集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
截止频率fT
Transtion Frequency(fT) |
300MHz |
直流电流增益hFE
DC Current Gain(hFE) |
200~450 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200~600 mV |
耗散功率Pc
Power Dissipation |
310mW/0.31W |
| Description & Applications |
NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. |
| 描述与应用 |
NPN硅外延平面晶体管开关和AF放大器应用。 特别适用于自动插入厚薄膜电路。 这些晶体管被分为三组，A，B和C根据其电流增益。 BC846是不同的，在组A和B，然而，类型BC847和BC848可以提供在所有三个组。 BC849是一款低噪声型可在B和C组作为互补类型，PNP晶体管BC856... BC859建议。 |