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  • Model：DMN66D0LDW-7
  • Manufacturer：HUABAN
  • Date Code：12+ROHS 12+ROHS
  • Standard Package：3000
  • Min Order：1
  • Mark/silk print/code/type：MN1ZN
  • Package：SOT-363/SC70-6

Drain-Source Voltage (Vds)  60V

Vgs(±)

Gate-Source Voltage

  20V
Drain Current  （Id）  115MA

Rds(on)

Drain-Source On-State Resistance

  VGS = 5.0V, ID = 0.115A 6Ω

Vgs(th)

Gate-Source Threshold Voltage

  2V
Power Dissipation  (Pd)  250MW
Description & Applications  • Dual N-Channel MOSFET  • Low On-Resistance  • Low Gate Threshold Voltage  • Low Input Capacitance  • Fast Switching Speed  • Small Surface Mount Package  • ESD Protected Gate, 1KV (HBM)  • Lead Free/RoHS Compliant (Note 2)  • Qualified to AEC-Q101 Standards for High Reliability 
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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DMN66D0LDW-7
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