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2N7002T MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking 27W fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage 60V
最大栅源极电压Vgs(±) Gate-Source Voltage 30V
最大漏极电流Id Drain Current 300mA/0.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 2.8Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-2.5V
耗散功率Pd Power Dissipation 830mW/0.83W
Description & Applications N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-channel TrenchMOS FET Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology
描述与应用 N沟道增强型场效应晶体管 特性 N-沟道FETTrenchMOS 兼容逻辑电平阈 开关速度非常快 表面贴装封装 TrenchMOS技术
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