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2N7002VA-7 Complex FET 60 280mA/0.28A SOT-563 marking KAY high-speed switch low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
280mA/0.28A
源漏极导通电阻Rds
Drain-Source On-State Resistance
7.5Ω@ VGS = 5V,ID = 50mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1~2.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant
描述与应用双N沟道增强型场效应晶体管 特点 双N沟道MOSFET 低导通电阻? 低栅极阈值电压 低输入电容? 开关速度快吗? 低输入/输出漏? 超小型表面贴装封装 无铅设计/符合限制有害物质指令(RoHS)规范要求
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