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2SA1162Y PNP transistors(BJT) -50V -150mA/-0.15A 80MHz 70~400 -100mV/-0.1V SOT-23 marking SY radio amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−150mA/-0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
70~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-100mV/-0.1V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsAudio Frequency General Purpose Amplifier Applications Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2712 • Small package APPLICATIONS • Audio Frequency General Purpose Amplifier Applications
描述与应用音频通用放大器应用 特点 •TOSHIBA晶体管的硅PNP外延式(PCT的进程) •高电压和高电流:VCEO=-50 V,IC= -150 mA(最大) •优秀HFE线性:HFE(IC= -0.1毫安)/ HFE(IC=-2毫安)=0.95(典型值) •高HFE:HFE=70〜400 •低噪音:NF=1分贝(典型值),10分贝(最大) •互补2SC2712 •小型封装 应用 •音频通用放大器应用
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