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2SA1365 PNP transistors(BJT) -25V -700mA/-0.7A 180MHz 150~300 -200mV/-0.2V SOT-23/SC-59 marking AE large current drive

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-700mA/-0.7A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
150~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−200mV/-0.2V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & Applicationsfor high current drive application silicon PNP epitaxial type high collector current; high gain band width product; excellent linearity of DC forward current gain; low collector to emitter saturation voltage
描述与应用为高电流驱动应用 硅PNP外延型 高集电极电流; 高增益带宽产品; 卓越的线性度直流正向电流增益; 集电极到发射极饱和电压低
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