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2SA1575 PNP transistors（BJT） -200V -100mA/-0.1A 400MHz 20 -1000mV/-1V SOT-89/PCP marking AF high frequency/broadband amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -200V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -200V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 400MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 20 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP/NPN Epitaxial planar silicon transistors High frequency amp wide band amp high fT; high breakdown voltage； small reverse transfer capacitance and excellent high-frequency characteristic； adoption of FBET process |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高频放大器 宽带放大器 高频率; 击穿电压高; 小反向传输电容和优异的高频特性; 采用FBET过程 |
