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2SA1676 PNP transistors(BJT) -50V -100mA/-0.1A 250MHz 50 -110mV/-0.11V SOT-323/MCP marking BL bias resistor

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
50
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-110mV/-0.11V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP/NPN epitaxial planer silicon transistors Applications · Swicthing circuits, inverter circuits, interface circuits,driver circuits. Features · On-chip bias resistance : R1=47kΩ, R2=47kΩ.
描述与应用PNP/ NPN外延刨床 硅晶体管 应用  ·Swicthing电路,逆变器电路,接口电路,驱动器电路。 特点  ·片上偏置电阻:R1=47kΩ上,R2=47kΩ的。
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