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2SA1763 PNP transistors(BJT) -15V -200mA/-0.2A 1GHz 50~140 -70mV SOT-323/MCP marking FS highspeed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−15V
集电极连续输出电流IC
Collector Current(IC)
−200mA/-0.2A
截止频率fT
Transtion Frequency(fT)
1GHz
直流电流增益hFE
DC Current Gain(hFE)
50~140
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-70mV
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP epitaxial planar silicon transistor High speed switching applications Features fast switching speed; low collector saturation voltage; high gain-bandwidth product; small collector capacitance
描述与应用PNP外延平面硅晶体管 高速开关应用 特点 开关速度快; 集电极饱和电压低; 高增益带宽积; 小集电极电容
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