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2SA1862TLP PNP transistors(BJT) -400V -2A 18MHz 82~180 -300mV/-0.3V TO-252/DPAK marking A1862 high breakdown voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-400V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-400V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
18MHz
直流电流增益hFE
DC Current Gain(hFE)
82~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsHigh-voltage switching transistor high breakdown voltage; low saturation voltage; high switching speed
描述与应用高压开关晶体管 击穿电压高; 低饱和电压; 高开关速度
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