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2SA1973-6 PNP transistors(BJT) -30V -1A 150MHz 200~400 -150mV/-0.15V SOT-23/CP marking NS6 low-frequency general amplifier driver

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−25V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−150mV/-0.15V
耗散功率Pc
PoWer Dissipation
250mW/0.25W
Description & ApplicationsLow-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features · Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage(VCE(sat)≤0.3V). · High VEBO (VEBO≥15V).
描述与应用低频通用放大器驱动器,静音电路应用 特点  ·采用FBET,MBIT过程。  ·大电流容量。  ·低集电极 - 发射极饱和电压。  ·高速开关。  ·超小包装便于在终端产品的小型化
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