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2SA2028 PNP transistors（BJT） -20V -1A 170MHz 160~560 -100mV/-0.1V SOT-323/SC-70 marking AT DC-DCconvertor
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 170MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~560 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | Silicon PNP epitaxial planar type PNP Silicon epitaxial planar type For DC-DC converter Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • S-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | PNP硅外延平面型 PNP硅外延平面型 用于DC-DC转换器 特点 •低集电极 - 发射极饱和电压VCE（星期六） •高速开关 •S-迷你型包装，允许裁员和通过磁带包装设备和自动插入变薄 |
