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2SB1197K PNP transistors（BJT） -40V -800mA/-0.8A 200MHz 270~560 -500mV/-0.5V SOT-23/SMT3 marking AHS
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−32V |
| 集电极连续输出电流IC Collector Current(IC) |
-800mA/-0.8A |
| 截止频率fT Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
270~560 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
−500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation |
200mW/0.2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Low Frequency Transistor Features 1) Low VCE(sat) 2) Complements to 2SD1781K |
| 描述与应用 | PNP硅外延平面晶体管 低频晶体管 特点 1）低VCE（SAT） 2）补充型2SD1781K |
