2SB1218A-Q PNP transistors（BJT） -45V -100mA/-0.1A 80MHz 160~260 -500mV/-0.5V SOT-323/SC-70 marking BQ amplifier|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SB1218A-Q PNP transistors（BJT） -45V -100mA/-0.1A 80MHz 160~260 -500mV/-0.5V SOT-323/SC-70 marking BQ amplifier

Model：2SB1218A-Q
Mark / screen / code / typing：BQ
Manufacturer：
Date Code：07+rohs3k 08+ROHS
Package：SOT-323/SC-70
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-45V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−45V
集电极连续输出电流IC Collector Current(IC)	−100mA/-0.1A
截止频率fT Transtion Frequency(fT)	80MHz
直流电流增益hFE DC Current Gain(hFE)	160~260
管压降VCE（sat） Collector-Emitter SaturationVoltage	−500mV/-0.5V
耗散功率Pc PoWer Dissipation	150mW/0.15W
Description & Applications	PNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD1819A Features High foward current transfer ratio hFE. S-Mini type package
描述与应用	PNP硅外延平面晶体管对于一般的放大补充型2SD1819A 特点高FOWARD电流传输比HFE。 S-迷你型封装

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