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2SB1301 PNP transistors（BJT） -20V -5A 140MHz 200~400 -500mV/-0.5V SOT-89/SC-62 marking ZQ high hFE
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -16V |
| 集电极连续输出电流IC Collector Current(IC) | -5A |
| 截止频率fT Transtion Frequency(fT) | 140MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Features 1) Low collector-to-emitter saturation voltage 2)Large current capacity and wide ASO 3) High hFE 4) Complements to 2SD1952. |
| 描述与应用 | PNP硅外延平面晶体管 特点 1）低集电极 - 发射极饱和电压 2）大电流容量，广ASO 3）高hFE 4）补充型2SD1952。 |
