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2SB1424 PNP transistors(BJT) -20V -3A 240MHz 120~270 -500mV/-0.5V SOT-89/MPT marking AEQ

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
240MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
600mW/0.6W
Description & Applications PNP Silicon epitaxial planar transistor Low frequency transistor Features 1) Low VCE(sat) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150.
描述与应用 PNP硅外延平面晶体管 低频晶体管 特点 1)低VCE(SAT) 2)优秀DC电流增益特性。 3)补充2SD2150。
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