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2SB1561-Q PNP transistors(BJT) -60V -2A 200MHz 120~270 -350mV/-0.35V SOT-89/MPT marking BLQ

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−60V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−550mV/-0.55V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsMedium Power Transistor Features Low saturation voltage Complements to2SD2391.
描述与应用中等功率晶体管 特点 低饱和电压 补充型to2SD2391。
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