2SB1661S PNP transistors（BJT） -300V -150mA/-0.15A 11MHz 50~200 -1000mV/-1V TO-252/DPAK marking B1661|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SB1661S PNP transistors（BJT） -300V -150mA/-0.15A 11MHz 50~200 -1000mV/-1V TO-252/DPAK marking B1661

Model：2SB1661S
Mark / screen / code / typing：B1661
Manufacturer：
Date Code：05+
Package：TO-252/DPAK
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-300V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−300V
集电极连续输出电流IC Collector Current(IC)	−150mA/-0.15A
截止频率fT Transtion Frequency(fT)	11MHz
直流电流增益hFE DC Current Gain(hFE)	50~200
管压降VCE（sat） Collector-Emitter SaturationVoltage	-1000mV/-1V
耗散功率Pc PoWer Dissipation	10W
Description & Applications	Silicon PNP Triple Diffused Low Frequency Amplifier Features High voltage .
描述与应用	三重扩散PNP硅晶体管特点高电压。

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