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2SB799 PNP transistors（BJT） -60V -700mA/-0.7A 120MHz 200~400 -160mV/-0.16V SOT-89/SC-62 marking MK low collector saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−50V |
| 集电极连续输出电流IC Collector Current(IC) |
-700mA/-0.7A |
| 截止频率fT Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
-160mV/-0.16V |
| 耗散功率Pc PoWer Dissipation |
2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold low collector saturation voltage； complementary to 2SD1000 |
| 描述与应用 | PNP硅外延晶体管 电源小型模具 集电极饱和电压低; 2SD1000互补 |
