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2SB815B6 PNP transistors(BJT) -20V -700mA/-0.7A 250MHz 200~400 -60mV SOT-23/CP marking B6 large current/low saturation voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−15V
集电极连续输出电流IC
Collector Current(IC)
-700mA/-0.7A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-60mV
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applicationssilicon (PNP/NPN) Epitaxial planar transistors large current capacity and low saturation voltage
描述与应用硅(PNP/ NPN)外延平面晶体管 大电流能力和低饱和电压
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