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2SC2713-GR NPN Transistors(BJT) 120V 100mA/0.1A 100MHz 200~400 300mV/0.3V SOT-23/SC-59 marking DG radio general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
120V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsNPN Silicon epitaxial Transistors Audio frequency general purpose amplifier applications Features High voltage Excellent hFE linearity High hFE Low noise Small package Complementary to 2SA1163
描述与应用NPN硅外延晶体管 音频通用放大器应用 特点 高压 优秀HFE线性 高HFE 低噪音 小型封装 互补2SA1163
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