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2SC3052 NPN Transistors(BJT) 50V 200mA/0.2A 200MHz 250~500 300mV/0.3V SOT-23/SC-59 marking LF high-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
250~500
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsNPN Silicon epitaxial Transistors For high frequency amplify applications Features Low collector to emitter saturation voltage Excellent linearity of DC forward current gain super mini package for easy mounting.
描述与应用NPN硅外延晶体管 对于高频放大的应用 特点 集电极到发射极饱和电压低 优秀的线性的直流正向电流增益 易于安装的超小型封装。
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