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2SC3134 NPN Transistors(BJT) 60V 150mA/0.15A 100MHz 200~400 500mV/0.5V SOT-23/SC-59 marking H6 amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial Transistors For AF applications features High VEBO Wide ASO and high durability against breakdown Complementary to 2SA1252 |
| 描述与应用 | NPN硅外延晶体管 对于AF应用 特点 高VEBO 宽的ASO和高耐久性反对击穿 互补型2SA1252 |
