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2SC4116-GR NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 100mV/0.1V SOT-323/SC-70/USM marking LG radio general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
100mW/0.1W
Description & ApplicationsTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 High hFE: hFE = 70-700 Low noise: NF = 1dB (typ.), 10dB Complementary to 2SA1586 Small package
描述与应用东芝晶体管的硅NPN外延式(PCT的进程) 音频通用放大器应用 高电压和高电流:VCEO=50 V,IC=150毫安 优秀HFE线性:HFE(IC= 0.1毫安)/ HFE(IC= 2毫安)= 0.95 高HFE:HFE=70-700 低噪音:NF=1分贝(典型值),10分贝 与2SA1586互补 小型封装
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