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2sc4154 NPN Transistors(BJT) 50V 200mA/0.2A 200MHz 150~300 300mV/0.3V SOT-323/SC-70 marking LE low-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
150~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applications FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Small collector to emitter saturation voltage Excellent linearity of DC forward current gain Super mini package for easy mounting
描述与应用 用于低频放大应用 硅NPN外延型 小集电极到发射极饱和电压 出色的线性的直流正向电流增益 易于安装的超小型封装
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