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2SC4649 NPN Transistors(BJT) 25V 20mA 500MHz 56~120 100mV/0.1V SOT-523/SC75A/EMT3 marking JN

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
20mA
截止频率fT
Transtion Frequency(fT)
500MHz
直流电流增益hFE
DC Current Gain(hFE)
56~120
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applications Features •Silicon PNP epitaxial planer type •High transition frequency fT=500MHz(Typ) •low output capacitance Cob=1.4pF(Typ) •Low base resistance for high gain and excellent noise response
描述与应用 特点 •PNP硅外延平面型 •高转换频率fT=500MHz的(典型值) •低输出电容科夫=1.4pF(典型值) •低基极电阻的高增益和良好的噪声响应
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