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2SC4703 NPN Transistors(BJT) 25V 150mA/0.15A 6Ghz 125~250 SOT-89 marking SE microwave low noiselow distortion amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
6Ghz
直流电流增益hFE
DC Current Gain(hFE)
125~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
 
耗散功率Pc
Power Dissipation
1.8W
Description & Applications Features •SILICON TRANSISTOR •MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR •Low distortion at low supply voltage. IM2 55 dB TYP., IM3 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105 dB /75 •Large PT with surface mount type package.
描述与应用 特点 •硅晶体管 •微波低噪声,低失真放大器NPN硅外延晶体管 •低失真,低电源电压。 IM255 dB典型值,IM376分贝TYP。 @ VCE= 5 V,IC= 50 mA时,VO= 105分贝/ 75 •大PT表面贴装型封装。
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