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2SC5012 NPN Transistors(BJT) 20V 65mA 9Ghz 50~250 8V SOT-343 marking R37 high frequency low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
65mA
截止频率fT
Transtion Frequency(fT)
9Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
8V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsFeatures • SILICON TRANSISTOR • HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation
描述与应用特点 •硅晶体管 •高频低噪声放大器NPN硅外延晶体管4针SUPER MINI MOLD •小包装 •高增益带宽积(FT =9 GHz的TYP。) •低噪声,高增益 •低电压操作
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