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2SC5376-A NPN Transistors(BJT) 15V 400mA/0.4A 130MHz 300~600 15mV SOT-523/SSM marking FA radio general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
400mA/0.4A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
300~600
管压降VCE(sat)
Collector-Emitter Saturation Voltage
15mV
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applications transistor SILICON NPN EPITAXIAL TYPE Audio Frequency General Purpose Amplifier Applications Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max)
描述与应用晶体管NPN硅外延型 音频通用放大器应用 静音和开关应用 •低集电极饱和电压VCE(SAT)(1)  =15毫伏   @ IC=10毫安/ IB= 0.5毫安 •高集电极电流IC= 400 mA(最大)
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