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2SC5658 NPN Transistors(BJT) 60V 150mA/0.15A 180MHz 120~270 <400mV/0.4V sot-723/VMT3 marking BQ
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) |
180MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
120~270 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
<400mV/0.4V |
| 耗散功率Pc Power Dissipation |
200mW/0.2W |
| Description & Applications | General purpose transistor Features 1) Low Cob. Cob=2.0pF (Typ.) Structure Epitaxial planar type NPN silicon transistor |
| 描述与应用 | 通用晶体管 特点 1）低COB。 COB=2.0PF 结构 外延平面型 NPN硅晶体管 |
