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2SC5810 NPN Transistors(BJT) 100V 1A 400~1000 <170mV/0.17V SOT-89/PW-Mini marking 3C fast switch DC-DCswitch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
400~1000
管压降VCE(sat)
Collector-Emitter Saturation Voltage
<170mV/0.17V
耗散功率Pc
Power Dissipation
2W
Description & ApplicationsSilicon NPN Epitaxial Type Transistor High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.)
描述与应用硅NPN外延型晶体管 高速开关应用 DC-DC转换器应用 频闪应用 •高直流电流增益:HFE=400〜1000(IC=0.1 A) •低集电极 - 发射极饱和电压VCE(饱和)= 0.17 V(最大值) •高速开关:TF =85 ns
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