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2SC58630QL NPN Transistors(BJT) 300V 70mA 80MHz 60~150 1.2V SOT-23/SC-59 marking 7HQ general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流IC Collector Current(IC) | 70mA |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1.2V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planar type For general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT |
| 描述与应用 | NPN硅外延平面型 对于一般的放大 ■特点 •高集电极 - 发射极电压（基本打开）VCEO •高转换频率fT |
