2SD1000 NPN Transistors(BJT) 80V 300mA/0.3A 140MHz 200~400 150mV/0.15V SOT-89 marking LK radio power amplifier application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SD1000 NPN Transistors(BJT) 80V 300mA/0.3A 140MHz 200~400 150mV/0.15V SOT-89 marking LK radio power amplifier application

Model：2SD1000
Mark / screen / code / typing：LK
Manufacturer：
Date Code：08+1knopb 08+ROHS
Package：SOT-89
Standard Package：1000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	80V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	80V
集电极连续输出电流IC Collector Current(IC)	300mA/0.3A
截止频率fT Transtion Frequency(fT)	140MHz
直流电流增益hFE DC Current Gain(hFE)	200~400
管压降VCE（sat） Collector-Emitter Saturation Voltage	150mV/0.15V
耗散功率Pc Power Dissipation	2W
Description & Applications	Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * low collector saturation voltage * world standard miniature package
描述与应用	NPN硅外延晶体管描述 2SD1007是专为音频功放中的应用，特别是在混合集成电路特点 *低集电极饱和电压

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