2SD1614 NPN Transistors(BJT) 40V 2A 200MHz 200~400 300mV/0.3V SOT-89 marking XL radio power amplifier switch|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SD1614 NPN Transistors(BJT) 40V 2A 200MHz 200~400 300mV/0.3V SOT-89 marking XL radio power amplifier switch

Model：2SD1614
Mark / screen / code / typing：XL
Manufacturer：
Date Code：05+ 05+08NOPB1K
Package：SOT-89
Standard Package：1000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	20V
集电极连续输出电流IC Collector Current(IC)	2A
截止频率fT Transtion Frequency(fT)	200MHz
直流电流增益hFE DC Current Gain(hFE)	200~400
管压降VCE（sat） Collector-Emitter Saturation Voltage	300mV/0.3V
耗散功率Pc Power Dissipation	2W
Description & Applications	NPN Epitaxial Planar Silicon Transistor POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.2 V • high DC current Gain ：HFE135 to 600
描述与应用	NPN平面外延硅晶体管 POWER迷你模具说明 2SD1615，1615A音频功放和开关应用而设计的，特别是混合集成电路。特点 •世界标准小型封装 •低VCE（sat）的VCE（饱和）=0.2 V •高直流增益：HFE135600

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