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2SD1742A-P NPN Transistors(BJT) 80V 3A 30MHz 120~250 1.2V TO-263 marking D1742 low frequency power amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
30MHz
直流电流增益hFE
DC Current Gain(hFE)
120~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1.2V
耗散功率Pc
Power Dissipation
1.3W
Description & ApplicationsSilicon NPN triple diffusion planar type low freauency power amplification Features *High forward current transfer ratio hFE which has satisfactory linearity * Low collector to emitter saturation voltage VCE(sat) * I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
描述与应用硅NPN三重扩散平面型  低freauency功率放大 特点 *高HFE正向电流传输比,具有良好的线性 *低集电极到发射极饱和电压VCE(SAT) * I型包,使散热片直接焊接   在印刷电路板等的小型电子设备。
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