My order
Share to:  
Location:Home > Stock Inventory > Product Details

2SD1898-Q NPN Transistors(BJT) 100V 1A 100MHz 120~270 150mV/0.15V SOT-89/SC-62/MPT3 marking DFQ

Hot selling goods

Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsFeatures * High VCEO, VCEO = 80V * High IC, IC = 1A (DC) * Good hFE linearity. * Low VCE(sat). Structure Epitaxial planar type NPN silicon transistor
描述与应用特点 *高VCEO VCEO=80V *高IC IC= 1A(DC) *良好的HFE线性。 *低VCE(SAT)。 ?结构 外延平面型 NPN硅晶体管
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00