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2SD2114K NPN Transistors(BJT) 25V 500mA/0.5A 350MHz 1200~2700 180mV/0.18V SOT-23/SC-59/SMT3 marking BBW

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)		 25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)		 20V
集电极连续输出电流IC
Collector Current(IC)		 500mA/0.5A
截止频率fT
Transtion Frequency(fT)		 350MHz
直流电流增益hFE
DC Current Gain(hFE)		 1200~2700
管压降VCE（sat）
Collector-Emitter Saturation Voltage		 180mV/0.18V
耗散功率Pc
Power Dissipation		 200mW/0.2W
Description & Applications features * High DC current gain. hFE = 1200 (Typ.) * High emitter-base voltage. VEBO = 12V (Min.) * Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) structure Epitaxial planar type NPN silicon transisto
描述与应用 *高直流电流增益。 HFE=1200 *高发射基地电压。 VEBO=12V（最小值） *低VCE（SAT）。 VCE（饱和）=0.18V （IC/ IB=500mA/20毫安的） 结构 外延平面型 NPN硅transisto的
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