2SD2345 NPN Transistors(BJT) 50V 50mA 120MHz 1000~2000 50mV SOT-523/SC-75 marking 1ZT low-frequency amplifier|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SD2345 NPN Transistors(BJT) 50V 50mA 120MHz 1000~2000 50mV SOT-523/SC-75 marking 1ZT low-frequency amplifier

Model：2SD2345
Mark / screen / code / typing：1ZT
Manufacturer：
Date Code：05+
Package：SOT-523/SC-75
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	40V
集电极连续输出电流IC Collector Current(IC)	50mA
截止频率fT Transtion Frequency(fT)	120MHz
直流电流增益hFE DC Current Gain(hFE)	1000~2000
管压降VCE（sat） Collector-Emitter Saturation Voltage	50mV
耗散功率Pc Power Dissipation	125mW/0.125W
Description & Applications	Silicon NPN epitaxial planar type For low-frequency amplification Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat) High emitter to base voltage VEBO. Low noise voltage NV
描述与应用	NPN硅外延平面型对于低频放大特点高正向电流传输比HFE。低集电极到发射极饱和电压VCE（SAT）高发射器基极电压VEBO。低噪声电压NV

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