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2SD601A-R NPN Transistors(BJT) 60V 100mA/0.1A 150MHz 210 ~ 340 100mV/0.1V SOT-23/SC-59 marking ZR general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
210 ~ 340
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsSilicon NPN epitaxial planer type For general amplification Complementary to 2SB709A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
描述与应用NPN硅外延平面型 对于一般的放大 补充2SB709A 特点 高FOWARD电流传输比HFE。 低集电极到发射极饱和电压VCE(SAT) 迷你型包装,让瘦身带包装盒包装的设备和通过自动插入。
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