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2SD875-S NPN Transistors(BJT) 80V 500mA/0.5A 120MHz 185~330 200mV/0.2V SOT-89/SC-62 marking XS low frequency power amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
185~330
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsSilicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB767 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
描述与应用NPN硅外延平面型 对于低频功率放大互补2SB767 特点 大集电极功耗PC。 高集电极发射极电压VCEO。 迷你功率型封装 通过自动插入带包装盒包装。
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