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2SJ132-Z-E1 power MOSFET P-Channel -20V 2A 0.25ohm SOT-252 marking J132 switching circuit application

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.25Ω -1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--3.0V
耗散功率Pd
Power Dissipation
20W
Description & ApplicationsMOS FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOSFET FOR SWITCHING Gate drive available at logic level (VGS = −4 V) High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC
描述与应用MOS场效应功率晶体管 P沟道功率MOSFET 用于开关 栅极驱动逻辑电平(VGS=-4 V) 高电流控制由于在小尺寸,低RDS(on)(≅0.25Ω) 2SJ132-Z是一款铅工艺产品,非常适合安装一个混合IC
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