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2SJ163-Q JFET P-Channel 65 V -1.0~-3.0mA SOT-23 marking 4MQ low on-resistance/low noise

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Product description
最大源漏极电压Vds
Drain-Source Voltage
65 V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
65 V
漏极电流(Vgs=0V)IDSS
Drain Current
-1.0~-3.0mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
1.5~3.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsSilicon P-Channel Junction FET 2SJ163 For general switching Complementary to 2SK1103 Features Low ON-resistance Low-noise characteristics
描述与应用硅P沟道结型场效应管 2SJ163 对于一般的切换 互补2SK1103 特点 低导通电阻 低噪声特性
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