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2SJ484WY MOSFET P-Channel -30V 2A 0.18ohm SOT-89 marking WY high-speed switch low drive current

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.18Ω @-1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.0V
耗散功率Pd
Power Dissipation
1W
Description & ApplicationsFeatures • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.
描述与应用•低导通电阻 RDS(ON)=0.18Ω(典型值)。(VGS=10V,ID=-1A) •低驱动电流 •高速开关 •4V栅极驱动装置。
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