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2SJ517YYTL MOSFET P-Channel -20V -2A 0.18ohm SOT-89 marking YY high-speed switch
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
最大漏极电流Id Drain Current | -2A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.18Ω @-1A,-4V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.5--1.5V |
耗散功率Pd Power Dissipation | 1W |
Description & Applications | Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID =–1 A) • Low drive current • High speed switching • 2.5 V gate drive devices. |
描述与应用 | •低导通电阻 RDS(ON)=0.18Ω(典型值)。 (在VGS=-4 V,ID=-1 A) •低驱动电流 •高速开关 •2.5 V门驱动装置 |