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2SJ637-TL-E MOSFET P-Channel -100V -5A 0.24ohm SOT-252 marking J637 low on-resistance ultra high-speed switch 4V drive
最大源漏极电压Vds Drain-Source Voltage | -100V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | -5A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.24Ω @-2.5A,-10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -1.2--2.6V |
耗散功率Pd Power Dissipation | 1W |
Description & Applications | Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. |
描述与应用 | ·低导通电阻。 ·超高速开关。 ·4V驱动器 |