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2SK1284-Z-E1 MOSFET N-Channel 100V 3A TO-252/D-PAK marking K1284 low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.26Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | MOS FIELD EFFECT POWER TRANSISTOR Low on-state resistance Low Ciss Css=500 pF TYP Built-in G-S gate protection diode |
| 描述与应用 | MOS场效应功率晶体管 低通态电阻 低西斯CSS=500 pF（典型值） 内置G-S栅极保护二极管 |
