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2SK1581 MOSFET N-Channel 16V 200mA/0.2A SOT-23/SC-59 marking G14 FET for switching/high input impedance
| 最大源漏极电压Vds Drain-Source Voltage | 16V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.2Ω/Ohm @1mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.6V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N-CHANNEL MOS FET FOR SWITCHING Directly driven by having a 3V power supply Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor |
| 描述与应用 | N沟道MOS FET作开关 直接驱动3V电源 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数量通过省略偏置电阻 |
