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2SK1717 MOSFET N-Channel 60V 2A SOT-89/PW-Mini marking Z5 low Rds/High forward transfer admittance/low leakage current

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.28Ω/Ohm @1A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2.0V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsSilicon N-Channel MOS FET HIGH SPEED, HIGH CURRENT SWITCHING APPLICATION CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low drain-source on resistance High forward transfer admittance Low leakage current Enhancement mode
描述与应用硅N沟道MOS FET 高高速,大电流开关应用 斩波稳压器,DC-DC转换器和电机驱动应用 低漏源电阻 高正向转移导纳 低漏电流 增强型
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