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2SK1949STL MOSFET N-Channel 60V 5A TO-252/D-PAK marking K1949 fast switch/Low drive current

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.12Ω/Ohm @3A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-2.25V
耗散功率Pd Power Dissipation20W
Description & ApplicationsSilicon N-Channel MOS FET High speed power switching Features Silicon N-Channel MOS FET High speed power switching application Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche ratings
描述与应用硅N沟道MOS FET 高速功率开关 特性 硅N沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 4 V栅极驱动器可驱动从5 V电源 适用于开关稳压器,直流 - 直流转换器 雪崩额定值
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