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2SK208-R JFET N-Channel 50v 0.3~0.75mA SOT-23 marking JR low noise0.5dB

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Product description
最大源漏极电压Vds
Drain-Source Voltage
50v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-50v
漏极电流(Vgs=0V)IDSS
Drain Current
0.3~0.75ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.4~-5v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•Silicon N-Channel Junction FET High Breakdown Voltage : Vgds = -50V High Input Impedance :Igss = -1.0nA(Max.) (Vgs = -30V ) Low Noise : NF=0.5dB(Typ.) (Rg=100kΩ , f=120Hz) Small Package.
描述与应用•硅N沟道结型场效应管 高击穿电压:Vgds=-50V 高输入阻抗:IGSS=1.0nA(最大)(VGS =-30V) 低噪音:NF=0.5分贝(典型值)        (RG=100KΩ,F =120Hz的) 小包装。
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